As a result, the width As a result, the width of depletion region increases and no recombination of charge carriers occur. Working Principle of Diode What happens Inside the p-n Junction Diode? The PIN-diode is an alteration of the PN-junction for particular applications. Due to this a process called diffusion takes place. Working Principle of Diode. We can create a simple PN junction diode by doping pentavalent or donor impurity in one portion and trivalent or acceptor impurity in other portion of silicon or germanium crystal block. The junction region is now almost void of charge carriers and thus it is known as depletion layer. A diode’s working principle depends on the interaction of n-type and p-type semico nductors. In ideal conditions, this PN junction behaves as a short circuit when it is forward biased, and as an open circuit when it is in the reverse biased. A diode is a tiny electronic component used in almost all the electronic circuits to enable the flow of current in only one direction. Depletion region created across the pn junction by the initial movement of majority carrier across the junction. The positive terminal of the battery is connected to the anode of a diode and negative termi Related Articles: Working principle of Schottky diode Difference A PN junction is the simplest form of the semiconductor diode. Due to this a process called diffusion takes place. Depletion layer opposes only the the majority carrier not minority carrier. Working of PN PN junction Diode plays a vital role in our electronic fields, because of their unique property (current flows in only one direction) they are used in many electronic or electrical circuits like rectifiers, switches, clippers, clampers, voltage multipliers. PN Junction diode is a device made of two semiconductor material joined together with the required amount of impurity. Thus, a potential difference is created in the junction diode with n-region at a higher potential than the p-region. In this article, we learn about PN junction diode characteristics in detail – like how to bias a PN junction (Forward & Reverse bias methods), behavior of PN junction during forward & reverse bias setups, how to plot the VI characteristics, what is reverse breakdown and many other essential concepts regarding a PN junction diode. The n side will have large number of electrons and very few holes (due to thermal excitation) whereas the p side will have high concentration of holes and very few electrons. These dopings make a PN junction at the middle part of the block. PN Junction Diode, Construction, Working, and V-I characteristics Introduction and history of Diode Generally, all the electronic devices work on DC power supply but it’s impossible to generate DC power so, the usage of diodes comes into the picture to convert AC power supply to DC power supply . PN Junction Diode Characteristics[ V-I Forward and Reverse] PN Junction diode is a semiconductor devices which conducts from only one side. A pn junction diode is a two terminal single crystal semiconductor device whose one side is doped with acceptors and other side by donors. The occurrence of an intrinsic layer can significantly increase the breakdown voltage for the application of high-voltage. One terminal of p-n junction diode is Anode and other is cathode. Forward bias of PN junction diode The diode is forward biased. The formation of pn junction in a single crystal […] When light emitting diode is reverse biased, the free electrons (majority carriers) from n-side and holes (majority carriers) from p-side moves away from the junction. One terminal of p-n junction diode is Anode and other is cathode. The behaviour of the PN junction with regards to the potential barrier’s width produces an asymmetrical conducting two terminal device, better known as the PN Junction Diode. It can also be prepared by diffusing phosphorus into a p-type semiconductor. Also Read: Zener Diode, Its Working, Zener Breakdown And Its Applications Learn about different types … One day accidentally when the silicon crystal which has a crack in it was exposed to the sunlight, he found the flow of current through the crystal and that was later called as diode, which was the beginning of the semiconductor era. Working Principle of Diode. After the PN-junction diode was developed in the year 1940s, the diode was first exercised as a high-power rectifier, low-frequency during the year 1952. The n side will have large number of electrons and very few holes (due to thermal excitation) whereas the p side will have high concentration of holes and very few electrons. This results in the diffusion of aluminium into silicon and thus our PN junction diode is ready to be used in various semiconductor devices. In this article, I will explain the working principle of PN junction semiconductor diode. This potential is known as barrier potential. Hence it is an unidirectional device. Semiconductor PN Junction Diode is the simplest semiconductor device.

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